(Pontificia Universidad Católica del Perú, 2016-06-20) Montañez Huamán, Liz Margarita; Weingärtner, Roland; Hoppe, Harald
In this work, stoichiometric, structural and light emission properties of amorphous wide bandgap
semiconductor materials doped with terbium are presented. The amorphous nature of the thin
films was confirmed by X-ray diffraction under grazing incidence. Fourier transform infrared
spectroscopy spectra exhibit the formation of oxygen bonded elements and X-ray photoelectron
spectroscopy reveals the formation of aluminum oxynitride and silicon oxycarbide as host
matrices. The thin films were annealed at temperatures ranging from 300 °C to 1000 °C using a
rapid thermal processing furnace. The highest light emission intensity for the case of aluminum
oxynitride was obtained for terbium concentrations higher than 1 at% and for the annealing
temperature at around 400 °C. Additionally, using the characterized films as active layer first
electroluminescence devices were designed and investigated.
